MeV-UED Specifications
Here we briefly describe the scientific techniques available at MeV-UED and the instrument specifications.
Scientific Capabilities
Scientific Application | Technique |
---|---|
Time-resolved measurement of electron–phonon coupling | Measurement of Debye-Waller effect on multiple lattice reflections |
Time-resolved studies of momentum resolved phonon dynamics | Thermal diffuse scattering measurement |
Measurement of melting dynamics | Single-shot pump–probe measurements |
Three dimensional measurement of structural dynamics | Measurements of positional change of multiple lattice reflections at different sample orientations |
Measurement of chemical photodissociation or photoisomerization | Gas-jet UED |
Measurement of novel phase of quantum materials | Cryo-UED |
Source Parameters
Parameter | Value |
---|---|
Electron beam energy | @360 Hz: 2 - 4 MeV @1080 Hz: 2 - 2.3 MeV |
Repetition rate | Single shot → 360 Hz & 1080 Hz Other available rates: 1 Hz, 60 Hz, 120 Hz, 180 Hz, 540 Hz |
Charge per pulse | 1 - 100 fC (104 - 106 electrons) |
Beam emittance | 2 - 20 nm-rad |
Bunch length | @360 Hz <150 fs FWHM** @1080 Hz < 300 fs FWHM# |
Momentum resolution | <0.17Å-1 |
Beam spot size | 100-200 um (typical), 10 um (FWHM) focused |
*Upgrade planned in 2024, **Beam charge dependent, #Limited by r.f. jitter, contact staff for latest information.
Optical Laser Properties
Parameter | Value |
---|---|
Repetition rate | Single shot → 1080 Hz |
Wavelength range | 200 nm, 266 nm, 400 nm, 800nm, 240 nm - 2 µm tunable, 3-15 µm tunable |
Typical optical pulse energy | > 8 mJ @ 800 nm |
Nominal pulse duration | 75 fs (FWHM) |
Optical delay | 0 - 1.5 ns (physical delay stage) Contact laser group about longer delays. |
Optical spot size | 200 - 1500 µm (FWHM) |
*Upgrade planned in 2024
Detectors
Detector Parameter | Andor EMCCD | ePix direct electron detector |
Detector system description | Electron diffraction patterns are collected on a P43 phosphor screen which is imaged via a 45 degree mirror using a Andor iXon Ultra 888 EMCCD | Diffraction patterns are recorded via direct electron detection on the ePix10k camera. |
Operational mode | Integrating on the camera with times typically from 2 - 30 seconds. | Shot-by-shot readout at up to 360 Hz repetition rate
|
Point-spread-function | 85 µm (rms) | < 4 pixels (full width) |
Sensor size | 1024 x 1024 | 7.5 x 7.5 cm2 |
Pixel size | 13 µm x 13 µm | 100 µm x 100 µm |
Gain | Variable 3-1000 | 3 gain modes (High/Medium/Low) |
Data format | Legacy DAQ - .tiff LCLS-II DAQ - converted to hdf5 | -.xtc raw data files -peak finding reduction data saved to .hdf5 files |
Single electron detection | no | yes |
In-active Area | Center hole in phosphor | Horizontal/vertical gaps between modules covering < 10% of the detector area |
MeV-UED Contacts
Alex Reid
MeV-UED Facility Director & Instrument Lead
(650) 926-7467
alexhmr@slac.stanford.edu
Joel England
MeV-UED Accelerator Lead
(650) 926-3706
england@slac.stanford.edu
Stephen Weathersby
Area Manager
(650) 926-3890
spw@slac.stanford.edu
Ming-Fu Lin
Lead Scientist
(650) 926-2586
mfucb@slac.stanford.edu
Matthias Hoffmann
Lead Laser Scientist
(650) 926-4446
hoffmann@slac.stanford.edu
Xinxin Cheng
Staff Scientist
xcheng@slac.stanford.edu
Patrick Kramer
Laser Scientist
(650) 926-5148
pkramer@slac.stanford.edu
Randy Lemons
Laser Scientist
(650) 926-3477
rlemons@slac.stanford.edu
Cameron Duncan
Associate Scientist
cjduncan@slac.stanford.edu
Fuhao Ji
Associate Scientist
(650) 926-4678
fuhaoji@slac.stanford.edu
Yusong Liu
Associate Scientist
yusongl@slac.stanford.edu
Aaron Garza
Staff Engineer
(650) 926-4282
aarongs@slac.stanford.edu
Ian Roque
Staff Engineer
(650) 926-3407
iroque@slac.stanford.edu
Tianzhe Xu
Research Associate
txu@slac.stanford.edu
Sharon S. Philip
Research Associate
sharonsp@slac.stanford.edu